Please use this identifier to cite or link to this item: http://hdl.handle.net/11189/4764
Title: Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
Authors: Nyamhere, C
Das, AGM
Auret, FD
Chawanda, A
Pineda-Vargas, CA
Venter, A
Keywords: Ge;Defects;Proton irradiation;Electron irradiation;DLTS;L-DLTS
Issue Date: 2011
Publisher: Elsevier
Abstract: Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×1013 protons/cm2. The results show that proton irradiation resulted in primary hole traps at EV +0.15 and EV +0.30 eV and electron traps at EC −0.38, EC −0.32, EC −0.31, EC −0.22, EC −0.20, EC −0.17, EC −0.15 and EC −0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. EC −0.31, EC −0.17 and EC −0.04, and EV +0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent.
URI: http://dx.doi.org/10.1016/j.physb.2011.05.005
http://hdl.handle.net/11189/4764
Appears in Collections:HWSci - Journal Articles (DHET subsidised)

Files in This Item:
File Description SizeFormat 
Nyamhere_C_Das_AGM_Auret_FD_Chawanda_A_Pineda-Vargas_CA_Venter_A_Health & Well_2011.pdfMain Article442.06 kBAdobe PDFView/Open
Show full item record

Page view(s)

16
Last Week
0
Last month
0
checked on Jun 16, 2019

Download(s)

8
checked on Jun 16, 2019

Google ScholarTM

Check


This item is licensed under a Creative Commons License Creative Commons